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内容简介

　　《中外物理学精品书系·引进系列（30）：半导体纳米结构（影印版）（英文）》内容丰富，涵盖面广，可读性强，其中既有对我国传统物理字发展的梳理和总结，也有对正在蓬勃发展的物理学前沿的全面展示；既引进和介绍了世界物理学研究的发展动态，也面向国际主流领域传播中国物理的优秀专著。

目录

Preface
List of Contributors
1 Thermodynamics and Kinetics of Quantum Dot Growth
Vtaly Shchukin, Eckehard Scholl and Peter Kratzer
1.1 Introduction
1.1.1 Length and Time Scales
1.1.2 Multiscale Approach to the Modeling of Nanostructures
1.2 Atomistic Aspects of Growth
12.1 Diffusion of Ga Atoms on GaAs（001）
1.2.2 Energetics of As2 Incorporation During Growth
1.2.3 Kinetic Monte Carlo Simulation of GaAs Homoepitaxy
1.2.4 Wetting Layer Evolution
1.3 Size and Shapes of Individual Quantum Dots
1.3.1 Hybrid Approach to Calculation of the Equilibrium Shape of Individual Quantum Dots
1.3.2 Role of High-Index Facets in the Shape of Quantum Dots
1.3.3 Shape Transition During Quantum Dot Growth
1.3.4 Constraint Equilibrium of Quantum Dots with a Wetting Layer
1.4 Thermodynamics and Kinetics of Quantum Dot Ensembles
1.4.1 Equilibrium Volume of Strained Islands versus Ostwald Ripening
1.4.2 Crossover from Kinetically Controlled to Thermodynamically Controlled Growth of Quantum Dots
1.4.3 Tunable Metastability of Quantum Dot Arrays
1.4.4 Evolution Mechanisms in Dense Arrays of Elastically Interacting Quantum Dots
1.5 Quantum Dot Stacks
1.5.1 Transition between Vertically Correlated and Vertically Anticorrelated Quantum Dot Growth
1.5.2 Finite Size Effect: Abrupt Transitions between Correlated and Anticorrelated Growth
1.5.3 Reduction of a Size of a Critical Nucleus in the Second Quantum Dot Layer
1.6 Summary and Outlook
References

2 Control of Self-Organized In（Ga）As/GaAs Quantum Dot Growth
Udo W. Pohl andAndre Strittmatter
2.1 Introduction
2.2 Evolution and Strain Engineering of InGaAs/GaAs Quantum Dots
2.2.1 Evolution of InGaAs Dots
2.2.2 Engineering of Single and Stacked InGaAs QD Layers
2.3 Growth Control of Equally Shaped InAs/GaAs Quantum Dots
2.3.1 Formation of Self-Similar Dots with a Multimodal Size Distribution
2.3.2 Kinetic Description of Multimodal Dot-Ensemble Formation
2.4 Epitaxy of GaSb/GaAs Quantum Dots
2.4.1 Onset and Dynamics of GaSb/GaAs Quantum-Dot Formation
2.4.2 Structure of GaSb/GaAs Quantum Dots
2.5 Device Applications of InGaAs Quantum Dots
2.5.1 Edge-Emitting Lasers
2.5.2 Surface-Emitting Lasers
2.6 Conclusion
References

3 In-Situ Monitoring for Nano-Structure Growth in MOVPE
Markus Pristovsek and Wolfgang Richter
3.1 Introduction
3.2 Reflectance
3.3 Reflectance Anisotropy Spectroscopy （RAS）
3.3.1 RAS Spectra and Surface Reconstruction
3.3.2 Monolayer Oscillations
3.3.3 Monitoring of Carrier Concentration
3.4 Scanning Tunneling Microscopy （STM）
3.5 Conclusion
References

4 Bottom-up Approach to the Nanopatterning of Si（001）
R.Koch
4.1 Quantum Dot Growth on Semiconductor Templates
4.2 （2 x n） Reconstruction of Si（001）
……

5 Structural Characterisation of Quantum Dots by X-Ray Diffraction and TEM
6 The Atomic Structure of Quantum Dots
8 Phonons in Quantum Dots and Their Role in Exciton Dephasing
9 Theory of the Optical Response of Single and Coupled Semiconductor Quantum Dots
10 Theory of Nonlinear Transport for Ensembles of Quantum Dots
11 Quantum Dots for Memories
12 Visible-Bandgap II-VI Quantum Dot Heterostructures
13 Narrow-Gap Nanostructures in Strong Magnetic Fields
14 Optical Properties of III-V Quantum Dots
15 Ultrafast Coherent Spectroscopy of Single Semiconductor Quantum Dots
16 Single-Photon Generation from Single Quantum Dots
Index

前言/序言

中外物理学精品书系·引进系列（30）：半导体纳米结构（影印版）（英文） [Semiconductor Nanostructures] 电子书 下载 mobi epub pdf txt

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