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出版社：哈尔滨工业大学出版社

ISBN：9787560342818

商品编码：29459516003

包装：平装

出版时间：2014-01-01

具体描述

图书基本信息
图书名称	化合物半导体加工中的表征
作者	(美)布伦德尔等
定价	68.00元
出版社	哈尔滨工业大学出版社
ISBN	9787560342818
出版日期	2014-01-01
字数
页码
版次	1
装帧	平装
开本	16开
商品重量	0.4Kg

内容简介

化合物半导体加工中的表征一书是为使用化合物半导体材料与设备的科学家与工程师准备的，他们并不是表征专家。在研发与GaAs、GaA1As、LnP及HgCdTe基设备的制造中通常使用的材料与工艺提供常见的分析问题实例。这本布伦德尔、埃文斯、麦克盖尔编著的《化合物半导体加工中的表征》讨论了各种表征技术，深入了解每种技术是如何单独或结合使用来解决与材料相关的问题。这本书有助于选择并应用适当的分析技术在材料与设备加工的各个阶段，如：基体处理、外延生长、绝缘膜沉积、接触组、掺杂剂的引入。

作者简介

Preface to the Reissue of the Materials Characterization Series
Preface to Series
Preface to the Reissue of Characterization of Compound
Semiconductor Processing
Preface xiii
Contributors xv
CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES
1.1 Introduction
1.2 Surface Characterization of GaAs Wafers
Dislocations 3, Surface Composition and Chemical State
1.3 Ion Implantation
1.4 Epitaxial Crystal Growth
1.5 Summary
Ⅲ-V POUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS
2.1 Introduction
2.2 Growth Rate/LayerThickness
In Situ Growth Monitors 20, Post-Growth Structural Analysis
2.3 Composition Analysis
2.4 Impurity and Dopant Analysis
2.5 Electrical Properties in Optical Structures
2.6 Optical Properties in Single and Multilayer Structures
2.7 Interface Properties in Multilayer Structures
2.8 Summary
CONTACTS
3.1 Introduction
3.2 In Situ Probes
Surface Preparation and Characterization 44, Initial Metal Deposition 45,
Subsequent Metal Deposition
3.3 Unpatterned Test Structures
Electrical Characterization 48, Concentration Profiling 49,
Electron Microscopy
3.4 Patterned Test Structures
Barrier Height 51, Contact Resistance 53, Morphology
DIELECTRIC INSULATING LAYERS
4.1 Introduction
4.2 Oxides and Oxidation
4.3 HeteromorphicInsulators
4.4 Chemical Modification of GaAs Surfaces
4.5 Indium Phosphide-Insulator Interfaces
4.6 Heterojunction Quasi-Insulator Interfaces
4.7 Epitaxial Fluoride Insulators
4.8 Commentary
OTHER POUND SEMICONDUCTOR FILMS
5.1 Introduction
A Focus on HgCdTe 83, Objective and Scope 84, Background 84,
Representative Device Structure
5.2 Substrates and the CdTe Surface (Interface 1)
Substrate Quality 86, Substrate Surface Preparation
5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5)
Desired Characteristics of the Active Layers 90, Composition 90,
Crystalline Quality 91, Doping 93, Minority Carrier Lifetime
5.4 Heterojunction Interfaces (Interface 3)
Advantages of the Heterojunction 98, Desired Characteristics 98,
Characterizations
5.5 HgCdTe Surface Preparation (Interfaces 4 and 5)
Importance of the Chemically Etched Surface 100, Monitoring of the Surface
Cleanliness by Ellipsometry 101, Characterization of Thin Native Oxides on HgCdTe by XPS 102, Surface Analysis by UPS
5.6 Summary
DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs
6.1 Introduction
6.2 DLTS Technique: General Features
6.3 Fabrication and Qualification of Schottky Diodes
6.4 DLTS System
6.5 DLTS Measurement Procedure
6.6 Data Analysis
DLTS Spectrum 117, Activation Energy for Thermal Emission 118,
Trap Densities
6.7 EL2 Center
6.8 Summary
APPENDIX: TECHNIQUE SUMMARIES
1 Auger Electron Spectroscopy (AES)
2 Ballistic Electron Emission Microscopy (BEEM)
3 Capacitance-Voltage (C-V) Measurements
4 Deep Level Transient Spectroscopy (DLTS)
5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS)
6 Electron Beam Induced Current (EBIC) Microscopy
7 Energy-Dispersive X-Ray Spectroscopy (EDS)
8 Focused Ion Beams (FIBs)
9 Fourier Transform Infrared Spectroscopy (FTIR)
10 Hall Effect Resistivity Measurements
11 Inductively Coupled Plasma Mass Spectrometry (ICPMS)
12 Light Microscopy
13 Low-Energy Electron Diffraction (LEED)
14 Neutron Activation Analysis (NAA)
15 Optical Scatterometry
16 Photoluminescence (PL)
17 Raman Spectroscopy
18 Reflection High-Energy Electro