(全英文)半导体纳米材料在太赫兹电场中的特性沈韬 pdf epub mobi txt 电子书 下载 2025

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沈韬 著

图书标签:

• Semiconductor Nanomaterials
• Terahertz
• Terahertz Spectroscopy
• Nanomaterials
• Semiconductors
• Optoelectronics
• Material Science
• Physics
• Nanotechnology
• THz Technology

店铺： 炫丽之舞图书专营店

出版社： 冶金工业出版社

ISBN：9787502461614

商品编码：29867572550

包装：平装

出版时间：2014-03-01

基本信息

书名：(全英文)半导体纳米材料在太赫兹电场中的特性沈韬

定价：36.00元

作者：沈韬

出版社：冶金工业出版社

出版日期：2014-03-01

ISBN：9787502461614

字数：

页码：

版次：1

装帧：平装

开本：16开

商品重量：0.4kg

编辑推荐

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内容提要

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本书系统详尽地介绍了半导体基础纳米结构在太赫兹电场中的响应特性、空间载流子受激运动机理、解析及快速分析的方法。涵盖了半导体基础理论，载流子输运方程分析、有限元数值方法解析、等效电路分析方法等内容。《半导体纳米材料在太赫兹电场中的特性(英文版)》由沈韬编著。

目录

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1　Introduction
　References
2　Theoretical Framework
　2.1　Electromagic Field Theory
　2.2　Brief Review on Related Semiconductor Physics
　　2.2.1　Energy band theory
　　2.2.2　Carrier concentration at thermal equilibrium
　2.3　Charge Transport in Semiconductor
　References
3　Semiconductor Nanostructure in the Static Electric Field　
　3.1　Semiconductor Nanoplate in the Static Field
　3.2　Semiconductor Nanoparticle in the Static Field
4　Response of Elementary Semiconductor Nanostructures in Quasi-Static Electric Field
　4.1　Carrier Dynamics
　4.2　Semiconductor Nanoplate in the Quasi-Static Field
　4.3　Semiconductor Nanoparticle in the Quasi-Static Field
　References
5　Full Wave Analysis
　5.1　Full Wave Analysis of a Semiconductor Nanoparticle
　5.2　Response of Semiconductor Nanoparticle with High Doping Level in Dynamic Field
6　Equivalent Circuit Representation for Conductive Nanostructure
　6.1　Basic Concepts of Equivalent Circuit
　6.2　Equivalent Circuit Representation for the Semiconductor Nanoplate
　6.3　Equivalent Circuit Representation for the Semiconductor Nanoparticle
　6.4　Equivalent Circuit Representation for the Metal Nanoparticle
　References
7　Conclusion
　7.1　Summary
　7.2　Suggestions for Future Work
Appendix A
Appendix B

作者介绍

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文摘

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序言

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Certainly, here's a comprehensive book description, approximately 1500 words, for a hypothetical book titled "Semiconductor Nanomaterials in Terahertz Fields: Properties and Applications," by Shen Tao. This description focuses on the book's content without revealing any specifics about the author or the writing process. --- Semiconductor Nanomaterials in Terahertz Fields: Properties and Applications This seminal work delves into the intricate and rapidly evolving field of semiconductor nanomaterials when subjected to terahertz (THz) electromagnetic fields. The terahertz gap, spanning frequencies from 0.1 THz to 10 THz, represents a unique spectral region with profound implications for scientific research and technological innovation. For decades, understanding and harnessing the behavior of materials within this frequency range has been a significant challenge. This book addresses this challenge by providing a comprehensive and in-depth exploration of how the nanoscale architecture of semiconductors fundamentally alters their interaction with THz radiation, leading to novel phenomena and unlocking unprecedented application potential. The book is meticulously structured to guide the reader from fundamental principles to cutting-edge advancements. It begins with a foundational review of the electromagnetic spectrum, with a particular emphasis on the characteristics of the terahertz frequency range. This section will clarify the unique properties of THz waves, including their non-ionizing nature, their ability to penetrate many dielectric materials, and their strong interaction with molecular vibrations and lattice resonances. Following this, the book establishes a strong theoretical framework for understanding semiconductor physics at the nanoscale. It will revisit key concepts such as band structure, carrier dynamics, and quantum confinement effects in semiconductor nanostructures, explaining how these principles become even more critical when considering THz interactions. A substantial portion of the book is dedicated to exploring the diverse landscape of semiconductor nanomaterials relevant to THz applications. This includes a detailed examination of quantum dots, quantum wells, nanowires, and nanoparticles. For each material type, the book will discuss their unique synthesis methods, their characteristic physical and electronic properties, and importantly, how these properties are modulated by quantum mechanical effects inherent to their nanometer dimensions. The interplay between material dimensionality, composition, and surface properties will be critically analyzed in the context of their THz response. For instance, the impact of size quantization on the energy levels and optical transitions in semiconductor quantum dots will be elucidated, explaining how these transitions can be tuned to resonate with specific THz frequencies. Similarly, the unique electronic transport properties of semiconductor nanowires, influenced by surface scattering and carrier confinement, will be discussed in relation to their THz absorption and emission characteristics. The core of the book lies in its detailed exposition of the physical mechanisms governing the interaction between semiconductor nanomaterials and THz fields. This section will go beyond classical electromagnetic theory to incorporate quantum mechanical models that accurately describe phenomena such as THz absorption, emission, scattering, and field-induced modulation of carrier populations. Specific topics covered will include intraband and interband transitions in nanomaterials, plasmonic resonances in metallic or heavily doped semiconductor nanostructures, and the role of phonon-polaritons in dictating THz propagation and absorption. The book will meticulously detail how phenomena like the optical-phonon resonance in polar semiconductors, or the free-carrier absorption in doped semiconductors, are significantly modified by quantum confinement and surface effects at the nanoscale. The influence of external stimuli such as electric fields, magnetic fields, and temperature on these THz interactions will also be thoroughly investigated, providing a holistic understanding of the material's behavior. Furthermore, the book will present a comprehensive review of advanced characterization techniques specifically tailored for probing the THz properties of semiconductor nanomaterials. This includes discussions on THz time-domain spectroscopy (THz-TDS), Fourier-transform THz spectroscopy (FTHTRS), and THz imaging techniques. The underlying principles of these techniques will be explained, along with their capabilities in revealing information about carrier mobility, dielectric properties, phonon modes, and plasmonic behavior at the nanoscale. Crucially, the book will highlight how these techniques are employed to correlate measured THz responses with specific structural and electronic characteristics of the nanomaterials, enabling researchers to design and optimize materials for desired THz functionalities. The interpretation of complex spectral data and the extraction of meaningful physical parameters will be a key focus. A significant emphasis is placed on the diverse and burgeoning applications of semiconductor nanomaterials in the THz domain. This section will showcase how the unique properties discussed earlier translate into practical technological solutions. Applications explored will include: Terahertz Sensing and Imaging: The development of highly sensitive THz detectors and imagers for security screening, non-destructive testing, and medical diagnostics. The book will detail how semiconductor nanomaterials, with their tunable absorption and emission properties, can form the basis of next-generation THz sensors capable of operating at room temperature. Terahertz Communication: Investigating the potential of semiconductor nanomaterials in THz transceivers and components for high-bandwidth wireless communication systems. This includes exploring novel light-matter interactions that can facilitate efficient THz signal generation and modulation. Terahertz Spectroscopy and Metamaterials: The design and fabrication of semiconductor-based THz metamaterials and plasmonic structures for manipulating THz waves. This section will discuss how engineered nanostructures can exhibit extraordinary optical properties, such as negative refractive indices or perfect absorption, leading to novel functionalities in THz filtering, guiding, and sensing. Terahertz Optoelectronics and Photonics: The integration of semiconductor nanomaterials into THz optoelectronic devices, such as modulators, switches, and emitters. The book will examine how quantum confinement and carrier dynamics in nanomaterials can be exploited to achieve ultrafast and efficient THz signal processing. Terahertz Medical Applications: Exploring the use of THz technology enabled by semiconductor nanomaterials in biomedical applications, including non-invasive disease detection, drug delivery, and tissue characterization. The book will highlight the advantages of THz radiation's non-ionizing nature and its sensitivity to subtle changes in tissue composition. Throughout the book, the author will critically assess the current state-of-the-art, identifying key challenges and outlining promising future research directions. This forward-looking perspective will cover topics such as the development of novel nanomaterial synthesis techniques for improved control over size, shape, and composition, the advancement of theoretical models for more accurate prediction of THz properties, and the integration of semiconductor nanomaterials into complex THz systems. The book will also discuss the potential for scaling up the fabrication of these nanomaterials for industrial applications and the ongoing efforts to reduce the cost and complexity of THz technologies. This book is an indispensable resource for researchers, graduate students, and engineers working in the fields of condensed matter physics, materials science, electrical engineering, and applied optics. It provides a comprehensive understanding of the fundamental principles governing the interaction of semiconductor nanomaterials with terahertz fields, while also offering a detailed overview of their exciting and rapidly expanding application landscape. By bridging the gap between fundamental science and practical technology, this work aims to accelerate innovation and pave the way for transformative advancements in terahertz science and its applications. ---

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从《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》这个书名，我立刻感受到了一种对基础物理现象的深入探索精神。半导体纳米材料，由于尺寸效应，展现出与块体材料截然不同的电子和光学性质，这使得它们在光电器件、量子计算、生物传感等领域备受青睐。而“太赫兹电场”的加入，则将研究推向了一个更精细的尺度。太赫兹波段的能量特性，使其能够有效激发材料中的低能级跃迁，探测材料的振动模式，以及研究载流子的动态行为。我猜测，这本书将不仅仅是简单地列举一些性质，而是会深入挖掘半导体纳米材料在太赫兹电场下的微观作用机制。例如，在不同的太赫兹场强度和频率下，材料的吸收谱、透射谱、反射谱会发生怎样的变化？载流子的产生和湮灭速率是否会受到太赫兹场的显著影响？是否存在一些非线性的效应，使得材料在太赫兹场下展现出前所未有的响应？这些问题都深深吸引着我，我期望这本书能够提供详实的理论分析和实验证据，来解答这些科学谜团。

评分☆☆☆☆☆

这本书的名字《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》立刻勾起了我对材料科学前沿研究的浓厚兴趣。半导体纳米材料，顾名思义，是指尺寸在纳米级别的半导体材料，它们由于量子尺寸效应，表现出与块体材料截然不同的电子和光学性质，这使得它们在光电子学、催化、生物医学等领域有着广阔的应用前景。而“太赫兹电场”的加入，则将研究的焦点引向了一个非常规但极具潜力的电磁波谱区域。太赫兹波，作为介于微波和红外之间的电磁波，具有独特的穿透性，能够探测许多传统方法难以研究的物质特性。我猜想，这本书将深入探讨半导体纳米材料在太赫兹电场激励下，其载流子的产生、输运、复合等过程会发生怎样的变化。是否会展现出独特的非线性光学效应？是否能够通过调控纳米材料的结构和尺寸，来精确地控制其对太赫兹场的响应，从而实现特定的太赫兹应用？这些问题都让我对接下来的阅读充满期待。

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我对这本书的预期，很大程度上来自于“太赫兹电场”这个关键词。太赫兹波，介于微波和红外线之间，拥有独特的穿透能力和对许多物质的特异性响应，这使得它在成像、通信、安全检查以及生物医学等领域展现出巨大的潜力。而当我们将目光聚焦在“半导体纳米材料”上时，其本身的量子尺寸效应和高表面积特性，又会与太赫兹电场产生怎样奇妙的相互作用，这是我一直以来非常好奇的问题。这本书的题目暗示着它将不仅仅是罗列一些已知的性质，而是会深入剖析这些纳米材料在太赫兹电场驱动下的具体表现，例如载流子的动力学、激子行为、表面等离激元共振、以及可能的非线性光学效应等等。我设想，作者很可能会通过详细的理论推导，结合精密的实验测量，来揭示这些纳米材料在太赫兹波作用下，其电学、光学、甚至热学性质发生的深刻变化。能否通过调控纳米材料的尺寸、形貌、组分，甚至表面修饰，来精确地控制其对太赫兹场的响应，从而实现某种特定的功能，是我非常期待在这本书中能够找到答案的关键点。

评分☆☆☆☆☆

这本书的书名《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》直接点明了核心的研究内容，让我立刻联想到了一系列充满挑战和机遇的科学问题。半导体纳米材料，因其独特的量子尺寸效应，在电子和光学性能上与宏观材料有着显著差异，这使得它们在下一代电子器件、光电器件、甚至生物传感器领域拥有巨大的应用潜力。而“太赫兹电场”的引入，则将研究的焦点进一步推向了一个非常规但充满前景的领域。太赫兹波，作为一种介于微波和红外辐射之间的电磁波，具有优异的穿透性，能够探测许多传统光学手段难以触及的物质特性。我非常好奇，当这些具有特殊电子结构的半导体纳米材料遇到具有独特能量特性的太赫兹电场时，将会发生怎样令人瞩目的物理现象。这本书是否会深入探讨载流子的产生、复合、以及输运机制在太赫兹场驱动下的变化？是否会揭示新的激子行为、表面等离激元共振、或是非线性光学效应？这些都是我非常期待在这本书中能够找到答案的问题，因为它们直接关系到太赫兹技术与纳米材料的深度融合，以及未来可能催生的颠覆性应用。

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“半导体纳米材料”这个词语本身就足够引人遐想。从宏观到微观，材料的性质会发生翻天覆地的变化，而当尺寸进入纳米尺度时，量子效应开始显现，材料的电子结构、光学性质、表面化学特性等都会发生根本性的改变。我曾阅读过一些关于量子点、纳米线、二维材料（如石墨烯、过渡金属硫化物）等半导体纳米材料的综述，它们展现出的独特性能，例如量子限制效应、表面等离激元共振、以及高效的光电转换能力，无不令人惊叹。而这本书将目光投向了这些纳米材料在“太赫兹电场”中的表现，这无疑为我们打开了一个新的研究维度。太赫兹波段的电磁场，其能量介于微波和红外之间，可以激发材料中的低能级电子跃迁，或者与材料中的集体振动模式发生耦合。我猜测，这本书将详细阐述半导体纳米材料在太赫兹电场作用下，其载流子的产生、输运、湮灭等过程会发生怎样的变化。是会产生更快的响应速度？更强的吸收？还是会展现出前所未有的非线性光学效应？这些都是让我感到非常兴奋和好奇的问题。

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我对《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》这本书的期待，源于我对材料科学和电磁学交叉领域的浓厚兴趣。半导体纳米材料，因其独特的量子尺寸效应和高比表面积，在光电转换、传感、催化等众多领域展现出非凡的潜力。而太赫兹频段，作为电磁频谱中一个尚未被充分开发的区域，其独特的性质使其在信息传输、生物医学成像、安全检测等方面备受瞩目。将这两者结合，无疑是一个极具挑战性但也充满机遇的研究方向。我猜测，这本书将深入剖析不同类型的半导体纳米材料，如量子点、纳米线、二维材料等，在强太赫兹电场作用下可能发生的物理现象。这可能包括载流子的动力学行为、能带结构的变化、激子态的演化、以及与太赫兹场产生的各种耦合效应。我尤其对材料的非线性响应以及可能出现的新的光学现象充满好奇，这些都可能为开发高性能的太赫兹器件提供理论基础和技术指导。

评分☆☆☆☆☆

《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》——这个书名本身就散发着一种严谨而充满探索精神的学术气息。我对“半导体纳米材料”一直有着浓厚的兴趣，特别是那些展现出独特量子效应的材料，如量子点、纳米线、二维材料等。它们的尺寸效应赋予了材料在电子和光学性质上的巨大可调性，为新一代的功能器件提供了基础。而“太赫兹电场”的引入，则将研究的维度推向了一个更为精细和前沿的领域。太赫兹波，介于微波和红外之间，具有独特的能量和穿透性，能够探测许多宏观手段难以触及的材料特性。我非常好奇，这本书将如何深入阐述半导体纳米材料在强太赫兹电场作用下的行为。例如，是否会详细介绍载流子的激发电离、能量弛豫过程？是否会揭示与太赫兹场耦合产生的新的光学现象，如非线性效应、激子极化等？这些都将是理解和利用半导体纳米材料在太赫兹波段实现新型应用的关键。

评分☆☆☆☆☆

读到《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》这个书名，我脑海中立刻浮现出一幅精密的科学图景。半导体纳米材料，本身就充满了奇妙的量子效应，比如量子 confinement effect 带来的能带结构调控，以及巨大的表面积带来的活性增强。而“太赫兹电场”则将这种研究推向了一个更加独特的电磁波谱区域。太赫兹波，其能量介于微波和红外之间，可以激发材料中的低能激子，或者与材料的晶格振动产生共振。我非常好奇，当这两种独特的物理实体相结合时，会产生怎样令人兴奋的结果。这本书是否会详细阐述，不同形貌（如量子点、纳米线、纳米片）的半导体纳米材料，在太赫兹电场作用下，其光电转换效率、载流子动力学、以及表面等离激元共振等特性，会发生怎样显著的变化？我期待从中了解，如何通过调控材料的尺寸、组分、晶体结构，以及表面修饰，来优化其在太赫兹场下的响应，从而为太赫兹成像、通信、传感等应用提供新的解决方案。

评分☆☆☆☆☆

这本《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》的封面设计就足够吸引我了。深邃的蓝色背景，点缀着抽象的光斑和线条，隐约勾勒出纳米结构的复杂性，同时也暗示着太赫兹电场那种无形的、穿透性的力量。书名本身就有一种科技的冷峻感，但“Properties”这个词又带着一丝探索的温度。我一直对半导体材料在极端条件下的行为很感兴趣，而纳米尺度和太赫兹频段的结合，在我看来，几乎触及了物理学的前沿。从书名来看，我预感到这本书会深入探讨那些超越经典理论的量子效应和集体行为，或许会涉及到一些非常规的实验技术和理论建模。我特别好奇作者将如何平衡理论的严谨性和实验数据的呈现，因为这两个方面往往是这类前沿研究中最具挑战性的部分。我曾接触过一些关于纳米电子学和太赫兹光谱学的文献，但将两者如此紧密地联系起来的书籍并不常见。这让我对接下来的阅读充满了期待，希望能从中获得一些全新的视角和深刻的理解，或许还能激发我自己在相关领域的一些初步想法。

评分☆☆☆☆☆

这本书的书名《Semiconductor Nanomaterials in Terahertz Fields: Properties by Shen Tao》给我的第一印象是，它必定是一本聚焦于研究前沿的学术专著。我对“半导体纳米材料”的关注已经持续了相当一段时间，特别是那些具有独特量子尺寸效应的材料，比如量子点、纳米线、二维半导体等。这些材料在电子学、光电子学、催化等领域展现出了巨大的应用潜力。而“太赫兹电场”的加入，更是将研究的视角推向了一个更加精细和独特的层面。太赫兹波具有独特的穿透性和信息携带能力，在通信、成像、传感等领域有着广阔的应用前景。将半导体纳米材料置于太赫兹电场中研究其性质，无疑是为了探索如何利用这些纳米材料来优化或实现新的太赫兹应用。我期待书中能够深入探讨诸如载流子动力学、能带结构变化、激子行为、表面等离激元共振等在太赫兹场作用下的响应机制。这些都是理解材料在这一特殊频段下行为的关键。